Transient luminescence of dense InAs/GaAs quantum dot arrays
Identifieur interne : 00C719 ( Main/Repository ); précédent : 00C718; suivant : 00C720Transient luminescence of dense InAs/GaAs quantum dot arrays
Auteurs : RBID : Pascal:03-0107788Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
Carrier transfer between quantum dots (QDs) in very dense InAs/GaAs QD arrays is studied by means of steady state and time-resolved photoluminescence spanning a wide range of laser power from 109 to 1013 photons/(pulse×cm2). Carrier transfer involves transitions from the ground state of small QDs into lower lying states of larger QDs, a relaxation channel that saturates at high excitation densities. The transition from saturation of the interdot carrier transfer to the unsaturated regime is identified by analyzing the temporal shape of the luminescence signal for decreasing excitation densities. The rate equation model is proposed to account the temporal evolution of photoluminescence in dense QD systems. Numerical simulations of the carrier transfer and relaxation including the interdot coupling are in good agreement with the experimental results.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 00DC01
Links to Exploration step
Pascal:03-0107788Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Transient luminescence of dense InAs/GaAs quantum dot arrays</title><author><name sortKey="Tomm, J W" uniqKey="Tomm J">J. W. Tomm</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Strasse 2A, 12489 Berlin, Germany</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Strasse 2A, 12489 Berlin</wicri:regionArea><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arkansas</region></placeName><wicri:cityArea>Department of Physics, University of Arkansas, Fayetteville</wicri:cityArea></affiliation><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Ferdinand-Braun-Institut fur Hochstfrequenztechnik, Albert-Einstein-Strasse 11, 12489 Berlin, Germany</s1></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Ferdinand-Braun-Institut fur Hochstfrequenztechnik, Albert-Einstein-Strasse 11, 12489 Berlin</wicri:regionArea><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Elsaesser, T" uniqKey="Elsaesser T">T. Elsaesser</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Strasse 2A, 12489 Berlin, Germany</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Strasse 2A, 12489 Berlin</wicri:regionArea><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Mazur, Yu I" uniqKey="Mazur Y">Yu. I. Mazur</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Strasse 2A, 12489 Berlin, Germany</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Strasse 2A, 12489 Berlin</wicri:regionArea><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Kissel, H" uniqKey="Kissel H">H. Kissel</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Strasse 2A, 12489 Berlin, Germany</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Strasse 2A, 12489 Berlin</wicri:regionArea><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Tarasov, G G" uniqKey="Tarasov G">G. G. Tarasov</name></author><author><name sortKey="Zhuchenko, Z Ya" uniqKey="Zhuchenko Z">Z. Ya. Zhuchenko</name></author><author><name sortKey="Masselink, W T" uniqKey="Masselink W">W. T. Masselink</name></author></titleStmt><publicationStmt><idno type="inist">03-0107788</idno><date when="2003-01-15">2003-01-15</date><idno type="stanalyst">PASCAL 03-0107788 AIP</idno><idno type="RBID">Pascal:03-0107788</idno><idno type="wicri:Area/Main/Corpus">00DC01</idno><idno type="wicri:Area/Main/Repository">00C719</idno></publicationStmt><seriesStmt><idno type="ISSN">1098-0121</idno><title level="j" type="abbreviated">Phys. rev., B, Condens. matter mater. phys.</title><title level="j" type="main">Physical review. B, Condensed matter and materials physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gallium arsenides</term><term>Ground states</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Photoluminescence</term><term>Semiconductor quantum dots</term><term>Time resolved spectra</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7855C</term><term>7847</term><term>7866F</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Point quantique semiconducteur</term><term>Spectre résolution temporelle</term><term>Photoluminescence</term><term>Etat fondamental</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Carrier transfer between quantum dots (QDs) in very dense InAs/GaAs QD arrays is studied by means of steady state and time-resolved photoluminescence spanning a wide range of laser power from 10<sup>9</sup> to 10<sup>13</sup> photons/(pulse×cm<sup>2</sup>). Carrier transfer involves transitions from the ground state of small QDs into lower lying states of larger QDs, a relaxation channel that saturates at high excitation densities. The transition from saturation of the interdot carrier transfer to the unsaturated regime is identified by analyzing the temporal shape of the luminescence signal for decreasing excitation densities. The rate equation model is proposed to account the temporal evolution of photoluminescence in dense QD systems. Numerical simulations of the carrier transfer and relaxation including the interdot coupling are in good agreement with the experimental results.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1098-0121</s0></fA01><fA02 i1="01"><s0>PRBMDO</s0></fA02><fA03 i2="1"><s0>Phys. rev., B, Condens. matter mater. phys.</s0></fA03><fA05><s2>67</s2></fA05><fA06><s2>4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Transient luminescence of dense InAs/GaAs quantum dot arrays</s1></fA08><fA11 i1="01" i2="1"><s1>TOMM (J. W.)</s1></fA11><fA11 i1="02" i2="1"><s1>ELSAESSER (T.)</s1></fA11><fA11 i1="03" i2="1"><s1>MAZUR (Yu. I.)</s1></fA11><fA11 i1="04" i2="1"><s1>KISSEL (H.)</s1></fA11><fA11 i1="05" i2="1"><s1>TARASOV (G. G.)</s1></fA11><fA11 i1="06" i2="1"><s1>ZHUCHENKO (Z. Ya.)</s1></fA11><fA11 i1="07" i2="1"><s1>MASSELINK (W. T.)</s1></fA11><fA14 i1="01"><s1>Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Strasse 2A, 12489 Berlin, Germany</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701</s1></fA14><fA14 i1="03"><s1>Ferdinand-Braun-Institut fur Hochstfrequenztechnik, Albert-Einstein-Strasse 11, 12489 Berlin, Germany</s1></fA14><fA14 i1="04"><s1>Department of Physics, Humboldt-Universitat zu Berlin, Invalidenstrasse 110, 10115 Berlin, Germany</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA20><s2>045326-045326-8</s2></fA20><fA21><s1>2003-01-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>144 B</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0107788</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physical review. B, Condensed matter and materials physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Carrier transfer between quantum dots (QDs) in very dense InAs/GaAs QD arrays is studied by means of steady state and time-resolved photoluminescence spanning a wide range of laser power from 10<sup>9</sup> to 10<sup>13</sup> photons/(pulse×cm<sup>2</sup>). Carrier transfer involves transitions from the ground state of small QDs into lower lying states of larger QDs, a relaxation channel that saturates at high excitation densities. The transition from saturation of the interdot carrier transfer to the unsaturated regime is identified by analyzing the temporal shape of the luminescence signal for decreasing excitation densities. The rate equation model is proposed to account the temporal evolution of photoluminescence in dense QD systems. Numerical simulations of the carrier transfer and relaxation including the interdot coupling are in good agreement with the experimental results.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H55C</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H47</s0></fC02><fC02 i1="03" i2="3"><s0>001B70H66F</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7855C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7847</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7866F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Point quantique semiconducteur</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Semiconductor quantum dots</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Spectre résolution temporelle</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Time resolved spectra</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Photoluminescence</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Photoluminescence</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Etat fondamental</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Ground states</s0></fC03><fN21><s1>055</s1></fN21><fN47 i1="01" i2="1"><s0>0307M000432</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 00C719 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 00C719 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:03-0107788
|texte= Transient luminescence of dense InAs/GaAs quantum dot arrays
}}
| This area was generated with Dilib version V0.5.77. |  |